High k Gate Dielectrics

By Michel Houssa. 2003

289 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/44e70d76dc70d58283f5aaa428911b85554a1232

Citations in the corpus

• High-K materials and metal gates for CMOS applications (2015, unknown): “9 A wide range of organic ALD precursors has now been developed to allow high volatility and less corrosive exhausts [73-76] The main advantage of ALD is that it can grow the thinnest films of any method, and the most conformal films for step coverage or into deep trenches (Fig 12), but the growth r”