Variation in the fixed charge density of SiOx/ZrO2 gate dielectric stacks during postdeposition oxidation

By Michel Houssa, V. Afanas’ev, A. Stesmans, M. Heyns. 2000

185 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/9301e47ed8fd7df70ee65caeadb233ca3af279e3

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In Electrical and Electronic Engineering

1. Evgeni P. Gusev

In Materials Chemistry

1. Evgeni P. Gusev

Citations in the corpus

• Threshold voltage instabilities in high-/spl kappa/ gate dielectric stacks (2005, background): “Charge trapping under positive bias stressing is known to be more severe compared to conventional SiO -based gate dielectrics [6], [22], [27], [32]–[51].”