Fabrication and Characterization of the Charge-Plasma Diode
By B. Rajasekharan, R. Hueting, C. Salm, T. van Hemert, R. Wolters, J. Schmitz. IEEE Electron Device Letters, 2010
245 citations recorded by the source corpus.
Subfields: Biomedical Engineering, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/2aee4d7cfbef3dac2915835b85e12a905ab2a21c
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Biomedical Engineering
In Electrical and Electronic Engineering
Citations in the corpus
- Doping-Less Tunnel Field Effect Transistor: Design and Investigation (2013, methodology): “regions are formed using the charge plasma concept [23]–[26].”
- Bipolar Charge-Plasma Transistor: A Novel Three Terminal Device (2012, background): “forward current levels of the charge-plasma diode reported in [7] and [8].”
- Charge-Plasma Based Process Variation Immune Junctionless Transistor (2014, background): “The results indicate that the drain current in the conventional device is higher to that of the doping-less JLT due to very high doping (order of 1019cm−3) at fixed S/D aluminium contact (workfunction=4.28eV).”