N-type Schottky barrier source/drain MOSFET using ytterbium silicide

By Shiyang Zhu, Jingde Chen, M. Li, S.J. Lee, J. Singh, C.X. Zhu, A. Du, C. Tung, A. Chin, D. Kwong. IEEE Electron Device Letters, 2004

193 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/04f864c1df2231a8c0c0e2392416304e42f042af