Impact of Low-Energy Proton Induced Upsets on Test Methods and Rate Predictions

By B. Sierawski, J. Pellish, R. Reed, peixiong zhao, K. Warren, R. Weller, M. Mendenhall, J. Black, A. D. Tipton, M. Xapsos and 7 more. IEEE Transactions on Nuclear Science, 2009

193 citations recorded by the source corpus.

Direct ionization from low energy protons is shown to cause upsets in a 65-nm bulk CMOS SRAM, consistent with results reported for other deep submicron technologies. The experimental data are used to calibrate a Monte Carlo rate prediction model, which is used to evaluate the importance of this upset mechanism in typical space environments. For the ISS orbit and a geosynchronous (worst day) orbit, direct ionization from protons is a major contributor to the total error rate, but for a geosynchronous (solar min) orbit, the proton flux is too low to cause a significant number of events. The implications of these results for hardness assurance are discussed.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/6fbe06a76e2fba67e6a9d43c13c56d8a340c2dda

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In Electrical and Electronic Engineering

1. Lloyd W. Massengill
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Citations in the corpus

• Monte Carlo Simulation of Single Event Effects (2010, background): “In applications without detailed process, layout, and circuit details, a concentric set of weighted sensitive volumes is suitable for devices with simple upset mechanisms, such as an SRAM cell [59], [84], [85].”