Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap

By H. Y. Lee, Yu-Hsiu Chen, Pang-Shiu Chen, T. Wu, Frederick T. Chen, Ching-Chiun Wang, P. Tzeng, M. Tsai, C. Lien. IEEE Electron Device Letters, 2010

181 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/b7dc687df6c3791ec9b3950c1c96001530fd77cf

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Citations in the corpus

• Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey (2015, background): “, 2010 [49] TiN/Ti/HfOx/TiN SCLC SCLC Chen et al.”
• $\hbox{HfO}_{x}/\hbox{TiO}_{x}/\hbox{HfO}_{x}/ \hbox{TiO}_{x}$ Multilayer-Based Forming-Free RRAM Devices With Excellent Uniformity (2011, background): “It is believed that the TiOx layer may serve three folded purposes: First, the TiOx layers may attract oxygen from HfOx layers during the fabrication process, thus creating oxygen-vacancy-related defects [10] within dielectrics.”
• State of the art of metal oxide memristor devices (2016, background): “Established manners that ensure the formation and rupture of conductive filaments in semiconducting metal oxide systems are (i) the usage of ready-made non-stoichiometric active materials [96–99], (ii) doping the insulator with one or more metal or metal oxide [100, 101], and (iii) interfacing the i”