Alfred Kersch

Materials Chemistry · 2008–2019

A researcher in the Science corpus: 8 papers; trusts 6 researchers and is trusted by 2 researchers here, as inferred from the citation graph.

Subfields

• Materials Chemistry — 154 citations into it; #7,553 of 11,513 by trust here, #3,966 by citations
• Electrical and Electronic Engineering — 135 citations into it; #11,120 of 16,539 by trust here, #3,333 by citations

Whom Alfred Kersch trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

1. Johannes Müller

Who trusts Alfred Kersch overall

1. Uwe Schroeder
2. Thomas Mikolajick

Papers from Alfred Kersch's perspective

Ordered by how strongly the researchers Alfred Kersch trusts endorse each paper. Same corpus, a different order for every researcher.

1. Nanosecond Polarization Switching and Long Retention in a Novel MFIS-FET Based on Ferroelectric $\hbox{HfO}_{2}$ (IEEE Electron Device Letters)
2. AND T
3. Influence of cultivation temperature on the ligninolytic activity of selected fungal strains
4. Novel ferroelectric FET based synapse for neuromorphic systems (Symposium on VLSI Technology)
5. AFLOW: An automatic framework for high-throughput materials discovery
6. An object-oriented scripting interface to a legacy electronic structure code (Comput. Sci. Eng.)
7. Full-Potential Electronic Structure Method
8. Efficient projector expansion for the ab initio LCAO method
9. Density functional theory: Its origins, rise to prominence, and future
10. Multiscale modelling of defect kinetics in irradiated iron

Their papers

• Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories (2013) — 375 citations
• The Origin of Ferroelectricity in Hf$_{x}$ Zr$_{1-x}$ O$_2$: A Computational Investigation and a Surface Energy Model (2015) — 772 citations
• Stabilizing the ferroelectric phase in doped hafnium oxide (2015) — 523 citations
• Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films (2015) — 1,047 citations
• Origin of Ferroelectric Phase in Undoped HfO2 Films Deposited by Sputtering (2019) — 142 citations
• Al-, Y-, and La-doping effects favoring intrinsic and field induced ferroelectricity in HfO2: A first principles study (2018) — 140 citations
• Ferroelectric phase transitions in nanoscale HfO2 films enable giant pyroelectric energy conversion and highly efficient supercapacitors (2015) — 203 citations
• The effect of dopants on the dielectric constant of HfO2 and ZrO2 from first principles (2008) — 180 citations