On the Applicability of Single-Walled Carbon Nanotubes as VLSI Interconnects

By Navin Srivastava, Hong Li, Franz Kreupl, Kaustav Banerjee. IEEE transactions on nanotechnology, 2009

207 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/f793876117eece5ff618eaba635ba14212be23fe

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Hong Li
2. Chuan Xu
3. Kaustav Banerjee
4. Navin Srivastava
5. Roberto Suaya

In Materials Chemistry

1. Hong Li
2. Kaustav Banerjee
3. Chuan Xu
4. Navin Srivastava
5. Roberto Suaya

Citations in the corpus

• Carbon Nanomaterials for Next-Generation Interconnects and Passives: Physics, Status, and Prospects (2009, methodology): “For interconnect applications, it has been shown that a low-bias case is valid [102], wherein the acoustic phonon scattering will dominate.”
• High-Frequency Analysis of Carbon Nanotube Interconnects and Implications for On-Chip Inductor Design (2009, methodology): “Based on this understanding, the equivalent circuit model of CNT has been proposed in [7]–[9] and shown in Fig.”
• Modeling, Analysis, and Design of Graphene Nano-Ribbon Interconnects (2009, background): “Similar to the CNTs [8], the distributed capacitance of GNRs contains both the electrostatic and quantum capacitances, while the distributed inductance contains both the magnetic and kinetic inductances.”
• Compact AC Modeling and Performance Analysis of Through-Silicon Vias in 3-D ICs (2010, background): “Their low electrical resistivity [19], [20], reduced skin effect [21], [22], high thermal conductivity [23], and current carry capacity [19] merit additional attention.”