The Charge Plasma P-N Diode
By R. Hueting, C. Salm, J. Schmitz. IEEE Electron Device Letters, 2008
286 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/2b016fd7482a95d54dc231fb58993750c4935138
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In Electrical and Electronic Engineering
Citations in the corpus
- Doping-Less Tunnel Field Effect Transistor: Design and Investigation (2013, background): “, L D = √(εSiVT ) / (q N) where εSi is the dielectric constant of silicon, VT is the thermal voltage, and N is the carrier concentration in the body [24].”
- Bipolar Charge-Plasma Transistor: A Novel Three Terminal Device (2012, methodology): “As discussed in [8] and [17], the metal work”
- Fabrication and Characterization of the Charge-Plasma Diode (2010, background): “fabrication-related issues and produce performance specifications comparable with conventional diodes [9], [10].”
- Charge-Plasma Based Process Variation Immune Junctionless Transistor (2014, background): “N), where, Si is the dielectric constant of silicon, υT is the thermal voltage, and N is the carrier concentration in the body [12].”