Evaluation of switching performance of SiC devices in PWM inverter fed induction motor drives

By Zheyu Zhang, Fred Wang, Leon M. Tolbert, B. Blalock, Daniel Costinett. European Conference on Cognitive Ergonomics, 2014

166 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/ad722b1a4f506a1a893ef1e361b6784d7853bdd4

How researchers see this paper

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In Electrical and Electronic Engineering

1. Leon M. Tolbert
2. Zheyu Zhang
3. Fei Fred Wang
4. Fei Wang
5. Zhong Du
6. Keith McKenzie
7. John N. Chiasson

Citations in the corpus

• Overview of Silicon Carbide Technology: Device, Converter, System, and Application (2016, background): “14 illustrates that under the same operating condition, turn-off time with the motor load is doubled as compared to that when an optimally-designed inductor load is employed [128].”
• Temperature-Dependent Characterization, Modeling, and Switching Speed-Limitation Analysis of Third-Generation 10-kV SiC MOSFET (2018, background): “Some works about impact factors on the switching performance have been conducted for LV SiC devices including signal isolator [33], parasitic [34], crosstalk issue [35], electromagnetic interference (EMI) [36], and impact of load [37], but these works have not been extended into HV SiC devices.”