Improved Inversion Channel Mobility in 4H-SiC MOSFETs on Si Face Utilizing Phosphorus-Doped Gate Oxide

By D. Okamoto, H. Yano, K. Hirata, T. Hatayama, T. Fuyuki. IEEE Electron Device Letters, 2010

283 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/b927efd82a8061b4d9b510c4eed5f4b0f8c4edf1

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1. A. Pérez‐Tomás
2. J. Rebollo
3. P. Godignon
4. X. Perpiñà
5. J. Millán

Citations in the corpus

• A Survey of Wide Bandgap Power Semiconductor Devices (2014, background): “Besides, the channel mobility of POCl3-annealed MOSFETs has been proven to be ×3 that of NO-annealed MOSFETs [22].”