Energy dissipation and transport in nanoscale devices

By Eric Pop. 2010

1,161 citations recorded by the source corpus.

AbstractUnderstanding energy dissipation and transport in nanoscale structures is of great importance for the design of energy-efficient circuits and energy-conversion systems. This is also a rich domain for fundamental discoveries at the intersection of electron, lattice (phonon), and optical (photon) interactions. This review presents recent progress in understanding and manipulation of energy dissipation and transport in nanoscale solid-state structures. First, the landscape of power usage from nanoscale transistors (∼10−8 W) to massive data centers (∼109 W) is surveyed. Then, focus is given to energy dissipation in nanoscale circuits, silicon transistors, carbon nanostructures, and semiconductor nanowires. Concepts of steady-state and transient thermal transport are also reviewed in the context of nanoscale devices with sub-nanosecond switching times. Finally, recent directions regarding energy transport are reviewed, including electrical and thermal conductivity of nanostructures, thermal rectification, and the role of ubiquitous material interfaces.

Subfields: Materials Chemistry, Physical and Theoretical Chemistry

View Paper: https://www.semanticscholar.org/paper/6a96e0accfce3ea82d40cc8ace8f61e8d645fb0c

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Citations in the corpus

Strain effects on thermoelectric properties of two-dimensional materials (2015, methodology): “3 computer in a data centre, another kWh is used for cooling [5].”
Nanomaterials in transistors: From high-performance to thin-film applications (2015, background): “In the early 2000s, the performance (as measured by chip clock frequency) was necessarily capped to address the runaway power density problem (84): Smaller transistors could leak power even in the off state, leading to power-consumption and heat-generation issues.”
Two-Dimensional Materials for Thermal Management Applications (2018, background): “As a result, deteriorated performance or even failure may occur on devices with low thermal conductivity, despite the relatively low operating temperatures of the majority of other regions.(6)”
Colloquium: Strong-field phenomena in periodic systems (2017, background): “As a result of the continued miniaturization of semiconductor integrated circuits (Ionescu and Riel, 2011; Taur and Ning, 2013), microelectronics has approached operating regimes where dissipation phenomena limit the rate of information processing (Markov, 2014; Pop, 2010).”
Thermal Transport across Solid Interfaces with Nanoscale Imperfections: Effects of Roughness, Disorder, Dislocations, and Bonding on Thermal Boundary Conductance (2013, background): “e reader is referred to [4, 5, 26] for overviews of thermal boundary conductance at “smooth” or seemingly “perfect” interfaces.”
Thermal conduction phenomena in carbon nanotubes and related nanostructured materials (2013, methodology): “Heat dissipation within single nanotube (and other nanoscale) devices is critical to their performance and reliability (Pop, 2010).”
Experimental verification of Landauer’s principle linking information and thermodynamics (2012, background): “From a technological perspective, energy dissipation per logic operation in present-day silicon-based digital circuits is about a factor of 1,000 greater than the ultimate Landauer limit, but is predicted to quickly attain it within the next couple of decades 23,24 .”
Colloquium : Phononics: Manipulating heat flow with electronic analogs and beyond (2011, background): “…related thermoelectric phenomena on the micro-/nano- and molecular scales we refer the readers to the excellent treatises by Lepri et al. (2003), Casati (2005), Galperin et al. (2007), Dhar (2008), Li et al. (2005b), Zhang and Li (2010), Pop (2010), and recently also by Dubi and Di Ventra (2011).”