Innovative Materials, Devices, and CMOS Technologies for Low-Power Mobile Multimedia

By Thomas Skotnicki, C. Fenouillet-Béranger, C. Gallon, Frédéric Bœuf, S. Monfray, Fabrice Payet, Arnaud Pouydebasque, Melanie Szczap, Alexis Farcy, Franck Arnaud and 7 more. IEEE Transactions on Electron Devices, 2008

204 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/dd2d890505c5c07fd07b1fb8b83170b836e3353c

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In Electrical and Electronic Engineering

1. Isabelle Ferain
2. C. Colinge
3. Jean-Pierre Colinge
4. Te-Kuang Chiang
5. David J. Larson
6. T. Kelly

Citations in the corpus

• Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors (2011, background): “Figure 5 shows several examples of multigate devices, namely fin field-effect transistors (FinFETS), triple-gate (tri-gate) MOSFETS, gate-all-around MOSFETS (in which the gate electrode covers all sides of the channel region) and Π-gate and Ω-gate structures (which are so named because of the shape”