Effect of Al inclusion in HfO2 on the physical and electrical properties of the dielectrics

By Wenjuan Zhu, T. Tamagawa, M. Gibson, T. Furukawa, T. Ma. IEEE Electron Device Letters, 2002

245 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/36a2cc0de142fc0c224006791a76da2e02632cdd

Citations in the corpus

• Mobility measurement and degradation mechanisms of MOSFETs made with ultrathin high-k dielectrics (2004, unknown): “After source/drain activation at 1000 C, thin HfO and HfAlO films are deposited by Jet-Vapor-deposition (JVD) [10]–[12] at room temperature on”