G. Pei
Electrical and Electronic Engineering · with Kan · 2002
A researcher in the Science corpus: 3 papers; trusts 1 researcher and is trusted by 0 researchers here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 9 citations into it
Whom G. Pei trusts
Their strongest outbound trust, strongest first, inferred from their citations.
- Chenming Calvin Hu (in Electrical and Electronic Engineering)
Papers from G. Pei's perspective
Ordered by how strongly the researchers G. Pei trusts endorse each paper. Same corpus, a different order for every researcher.
- Sub-50 nm P-channel FinFET
- FinFET-a self-aligned double-gate MOSFET scalable to 20 nm
- NROM: A novel localized trapping, 2-bit nonvolatile memory cell (IEEE Electron Device Letters)
- Metal nanocrystal memories-part II: electrical characteristics
- Gate length scaling and threshold voltage control of double-gate MOSFETs (International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138))
- Nanowire transistors without junctions. (Nature Nanotechnology)
- High performance multilayer MoS2 transistors with scandium contacts. (Nano letters (Print))
- Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays
- Atomically thin MoS₂: a new direct-gap semiconductor. (Physical Review Letters)
- On Monolayer ${\rm MoS}_{2}$ Field-Effect Transistors at the Scaling Limit (IEEE Transactions on Electron Devices)
Their papers
- Metal nanocrystal memories-part II: electrical characteristics (2002) — 186 citations
- Metal nanocrystal memories. I. Device design and fabrication (2002) — 460 citations
- FinFET design considerations based on 3-D simulation and analytical modeling (2002) — 298 citations