D. Harmon

with Lai · 2002

A researcher in the Science corpus: 1 paper; trusts 1 researcher and is trusted by 0 researchers here, as inferred from the citation graph.

Whom D. Harmon trusts

Their strongest outbound trust, strongest first, inferred from their citations.

1. Jordi Suñé (in Electrical and Electronic Engineering)

Papers from D. Harmon's perspective

Ordered by how strongly the researchers D. Harmon trusts endorse each paper. Same corpus, a different order for every researcher.

1. New physics-based analytic approach to the thin-oxide breakdown statistics (IEEE Electron Device Letters)
2. Multiple-gate SOI MOSFETs
3. A continuous, analytic drain-current model for DG MOSFETs
4. Beyond the conventional transistor (IBM Journal of Research and Development)
5. Modeling of nanoscale gate-all-around MOSFETs (IEEE Electron Device Letters)
6. Multiple-gate SOI MOSFETs: device design guidelines
7. Ultra-thin oxide reliability for ULSI applications

Their papers

• Experimental evidence of T/sub BD/ power-law for voltage dependence of oxide breakdown in ultrathin gate oxides (2002) — 133 citations