Hisashi Shima
Electrical and Electronic Engineering · 2007–2010
A researcher in the Science corpus: 2 papers; trusts 4 researchers and is trusted by 7 researchers here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 36 citations into it; #6,292 of 16,539 by trust here, #7,175 by citations
- Cellular and Molecular Neuroscience — 5 citations into it
Whom Hisashi Shima trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Hisashi Shima overall
Papers from Hisashi Shima's perspective
Ordered by how strongly the researchers Hisashi Shima trusts endorse each paper. Same corpus, a different order for every researcher.
- Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM (2008 IEEE International Electron Devices Meeting)
- AND T
- Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory
- Low Power and High Speed Switching of Ti-doped NiO ReRAM under the Unipolar Voltage Source of less than 3 V (2007 IEEE International Electron Devices Meeting)
- Effects of heat dissipation on unipolar resistance switching in Pt∕NiO∕Pt capacitors
- Random Circuit Breaker Network Model for Unipolar Resistance Switching
- Nanoionics-based resistive switching memories. (Nature Materials)
- Memristive switching mechanism for metal/oxide/metal nanodevices. (Nature Nanotechnology)
- Γ and B
- Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition
Their papers
- Resistance switching in the metal deficient-type oxides: NiO and CoO (2007) — 148 citations
- Resistive Random Access Memory (ReRAM) Based on Metal Oxides (2010) — 942 citations