Effects of heat dissipation on unipolar resistance switching in Pt∕NiO∕Pt capacitors
By Seo Hyoung Chang, S. Chae, Shinbuhm Lee, Chunli Liu, T. Noh, Jae Sung Lee, Byungnam Kahng, Jae Hyuck Jang, Miyoung Kim, Dong-Wook Kim and 1 more. 2008
149 citations recorded by the source corpus.
We fabricated Pt∕NiO∕Pt capacitor structures with various bottom electrode thicknesses tBE and investigated their resistance switching behaviors. The capacitors with tBE⩾50nm exhibited typical unipolar resistance memory switching, while those with tBE⩽30nm showed threshold switching. This interesting phenomenon can be explained in terms of the temperature-dependent stability of conducting filaments. In particular, the thinner tBE makes dissipation of Joule heat less efficient, so the filaments will be at a higher temperature and become less stable. This study demonstrates the importance of heat dissipation in resistance random access memory.
Subfields: Electrical and Electronic Engineering, Polymers and Plastics
View Paper: https://www.semanticscholar.org/paper/483b76b9db961715bc41103a21a0dd22df24faea
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In Electrical and Electronic Engineering
- Daniele Ielmini
- R. Bruchhaus
- Rainer Waser
- H. Akinaga
- Hisashi Shima
- H. Philip Wong
- Shimeng Yu
- Ilia Valov
In Polymers and Plastics
Citations in the corpus
- Resistive Random Access Memory (ReRAM) Based on Metal Oxides (2010, background): “Our simulation confirmed that in the MOM structure of a Ta/CoOx/metal electrode, the temperature increased to the same order as that reported by other groups [ 36 ].”
- Thermochemical resistive switching: materials, mechanisms, and scaling projections (2011, background): “showed a transition from memory to threshold switching for decreasing thickness of the metallic bottom electrode, which was explained in terms of better heat diffusion, hence CF stability, for relatively thick electrodes 39 .”