Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory

By Myoung‐Jae Lee, Young-soo Park, D.-S. Suh, Eun-hong Lee, S. Seo, Dong-Chirl Kim, R. Jung, B. Kang, Seung‐Eon Ahn, Chang Bum Lee and 5 more. 2007

425 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/01a7f6c5c1e5e488d91262c7dc0fdeb34af49e64

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Daniele Ielmini
2. R. Bruchhaus
3. Rainer Waser
4. H. Akinaga
5. Hisashi Shima
6. Hyunsang Hwang
7. Zhaoping Liu
8. Xufeng Zhou

In Polymers and Plastics

1. R. Bruchhaus
2. Rainer Waser
3. Daniele Ielmini
4. H. Philip Wong

Citations in the corpus

• Mechanism of nonvolatile resistive switching in graphene oxide thin films (2011, background): “The reading of resistance states is nondestructive, and the memory devices can be operated without transistors in every cell [4,5], thus making a cross-bar structure feasible.”
• Excellent Selector Characteristics of Nanoscale $ \hbox{VO}_{2}$ for High-Density Bipolar ReRAM Applications (2011, background): “it has been reported that a VO2 selection device applied to a NiO unipolar ReRAM device exhibited the rectifying property [2].”
• Resistive Random Access Memory (ReRAM) Based on Metal Oxides (2010, background): “The compatibility with the memory element miniaturization in terms of the forward current density will become an important measure [79], [ 80 ].”