K. Nadda
IEEE Transactions on Electron Devices · 2012
A researcher in the Science corpus: 1 paper; trusts 0 researchers and is trusted by 0 researchers here, as inferred from the citation graph.
Papers from K. Nadda's perspective
Ordered by how strongly the researchers K. Nadda trusts endorse each paper. Same corpus, a different order for every researcher.
- The Charge Plasma P-N Diode (IEEE Electron Device Letters)
- Fabrication and Characterization of the Charge-Plasma Diode (IEEE Electron Device Letters)
- Overview and status of metal S/D Schottky-barrier MOSFET technology (IEEE Transactions on Electron Devices)
- Complementary silicide source/drain thin-body MOSFETs for the 20 nm gate length regime (International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138))
- Frontiers of silicon-on-insulator
- Metal‐Semiconductor Contacts
- Comparing carbon nanotube transistors - the ideal choice: a novel tunneling device design (IEEE Transactions on Electron Devices)
- Random Dopant Fluctuation in Limited-Width FinFET Technologies (IEEE Transactions on Electron Devices)
Their papers
- Bipolar Charge-Plasma Transistor: A Novel Three Terminal Device (2012) — 214 citations