Bipolar Charge-Plasma Transistor: A Novel Three Terminal Device

By Mamidala Jagadesh Kumar, K. Nadda. IEEE Transactions on Electron Devices, 2012

214 citations recorded by the source corpus.

A distinctive approach for forming a lateral bipolar charge-plasma transistor (BCPT) is explored using 2-D simulations. Different metal work-function electrodes are used to induce n- and p-type charge-plasma layers on undoped silicon-on-insulator (SOI) to form the emitter, base, and collector regions of a lateral n-p-n transistor. Electrical characteristics of the proposed device are simulated and compared with that of a conventionally doped lateral bipolar junction transistor (BJT) with identical dimensions. Our simulation results demonstrate that the BCPT concept will help us realize a superior bipolar transistor in terms of a high current gain, as compared with a conventional BJT. This BCPT concept is suitable in overcoming doping issues such as dopant activation and high-thermal budgets, which are serious issues in ultrathin SOI structures.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/4fc85a2ac5973470cb52ef58bf5f73361727d989

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Citations in the corpus

• Charge-Plasma Based Process Variation Immune Junctionless Transistor (2014, background): “Digital Object Identifier 10.1109/LED.2013.2297451 has recently been explored for p-n junction diode [11], doping-less BJT [13] and TFET [14].”