Frontiers of silicon-on-insulator
By G. Celler, S. Cristoloveanu. 2003
693 citations recorded by the source corpus.
Subfields: Biomedical Engineering, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/ebc6cbb0606277f323036f636a8603eeb6430a41
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In Biomedical Engineering
In Electrical and Electronic Engineering
Citations in the corpus
- Fabrication and Characterization of the Charge-Plasma Diode (2010, background): “S ILICON-ON-INSULATOR (SOI)-based devices with ultrathin body are considered for future very large scale integrated circuit (IC) applications [1]–[3].”
- Semiconducting Nanowire Field-Effect Transistor Biomolecular Sensors (2008, background): “[51], have led a number of groups to create NW-like devices using only traditional top–down processing techniques [52]–[63].”
- Design principles and considerations for the ‘ideal’ silicon piezoresistive pressure sensor: a focused review (2014, methodology): “This can be attributed to the evolution and improvements in SOI wafer production methods like bond-and-etchback SOI, separation by implantation of oxygen, SmartCut™, and epitaxial layer transfer (Celler and Cristoloveanu 2003; Bruel 1995; Plößl and Kräuter 2000).”