Shreepad Karmalkar

IEEE Electron Device Letters · 2001–2009

A researcher in the Science corpus: 3 papers; trusts 2 researchers and is trusted by 0 researchers here, as inferred from the citation graph.

Whom Shreepad Karmalkar trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

  1. E. Radziemska

Papers from Shreepad Karmalkar's perspective

Ordered by how strongly the researchers Shreepad Karmalkar trusts endorse each paper. Same corpus, a different order for every researcher.

  1. High breakdown GaN HEMT with overlapping gate structure (IEEE Electron Device Letters)
  2. Thermal performance of Si and GaAs based solar cells and modules: a review
  3. Solar cells parameters evaluation considering the series and shunt resistance
  4. AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy
  5. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs (IEEE Electron Device Letters)
  6. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
  7. Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB
  8. Effect of polarization fields on transport properties in AlGaN/GaN heterostructures
  9. SIMS investigations into the effect of growth conditions on residual impurity and silicon incorporation in GaN and AlxGa1−xN
  10. 30-W/mm GaN HEMTs by field plate optimization (IEEE Electron Device Letters)

Their papers