Alton B. Horsfall
2005–2008
A researcher in the Science corpus: 3 papers; trusts 0 researchers and is trusted by 0 researchers here, as inferred from the citation graph.
Papers from Alton B. Horsfall's perspective
Ordered by how strongly the researchers Alton B. Horsfall trusts endorse each paper. Same corpus, a different order for every researcher.
- Fundamentals of Power Semiconductor Devices
- Recombination-enhanced extension of stacking faults in 4H-SiC p-i-n diodes under forward bias
- Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes
- Degradation of hexagonal silicon-carbide-based bipolar devices
- Structure of recombination-induced stacking faults in high-voltage SiC p–n junctions
- 1800 V NPN bipolar junction transistors in 4H-SiC (IEEE Electron Device Letters)
- Electron mobility models for 4H, 6H, and 3C SiC [MESFETs]
- A Review of the State of the Art of Power Electronics for Wind Turbines (IEEE transactions on power electronics)
- Microgrids And Distributed Generation (Intelligent Automation and Soft Computing)
- Three-dimensional bicontinuous ultrafast-charge and -discharge bulk battery electrodes. (Nature Nanotechnology)
Their papers
- Prospects for SiC electronics and sensors (2008) — 221 citations
- SiC sensors: a review (2007) — 263 citations
- Formation and role of graphite and nickel silicide in nickel based ohmic contacts to n-type silicon carbide (2005) — 145 citations