U. Boettger
Electrical and Electronic Engineering · 2001–2017
A researcher in the Science corpus: 5 papers; trusts 4 researchers and is trusted by 0 researchers here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 51 citations into it
- Materials Chemistry — 45 citations into it
Whom U. Boettger trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Papers from U. Boettger's perspective
Ordered by how strongly the researchers U. Boettger trusts endorse each paper. Same corpus, a different order for every researcher.
- Ferroelectricity in hafnium oxide thin films
- A review of recent MOSFET threshold voltage extraction methods (Microelectronics and reliability)
- Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories (2013 IEEE International Electron Devices Meeting)
- Novel ferroelectric FET based synapse for neuromorphic systems (Symposium on VLSI Technology)
- Ferroelectric solid solutions with morphotropic boundaries: Vanishing polarization anisotropy, adaptive, polar glass, and two-phase states
- Influence of short-range and long-range order on the evolution of the morphotropic phase boundary in Pb Zr[sub 1−x]Ti[sub x] O₃
- High dielectric constant gate oxides for metal oxide Si transistors
- Vacancy and interstitial defects in hafnia
- Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films
- Review on high-k dielectrics reliability issues (IEEE transactions on device and materials reliability)
Their papers
- Relaxation mechanism of ferroelectric switching in Pb(Zr,Ti)O3 thin films (2001) — 135 citations
- Ferroelectric and piezoelectric properties of Hf1-xZrxO2 and pure ZrO2 films (2017) — 166 citations
- An extensive study of the influence of dopants on the ferroelectric properties of HfO2 (2017) — 152 citations
- The interface screening model as origin of imprint in PbZrxTi1−xO3 thin films. I. Dopant, illumination, and bias dependence (2002) — 220 citations
- Dielectric properties of Ba(Zr, Ti)O3-based ferroelectrics for capacitor applications (2001) — 204 citations