Alberto Castellazzi

IEEE Journal of Emerging and Selected Topics in Power Electronics · 2016

A researcher in the Science corpus: 2 papers; trusts 0 researchers and is trusted by 0 researchers here, as inferred from the citation graph.

Papers from Alberto Castellazzi's perspective

Ordered by how strongly the researchers Alberto Castellazzi trusts endorse each paper. Same corpus, a different order for every researcher.

1. Evaluation and Application of 600 V GaN HEMT in Cascode Structure (IEEE transactions on power electronics)
2. PWM Converter Power Density Barriers (2007 Power Conversion Conference - Nagoya)
3. Gate Oxide Reliability Issues of SiC MOSFETs Under Short-Circuit Operation (IEEE transactions on power electronics)
4. 99.3% Efficiency of three-phase inverter for motor drive using GaN-based Gate Injection Transistors (Applied Power Electronics Conference)
5. A Survey of Wide Bandgap Power Semiconductor Devices (IEEE transactions on power electronics)
6. A New Degradation Mechanism in High-Voltage SiC Power MOSFETs (IEEE Electron Device Letters)
7. Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments (IEEE transactions on device and materials reliability)
8. Datasheet Driven Silicon Carbide Power MOSFET Model (IEEE transactions on power electronics)
9. Silicon Carbide Power Devices
10. Characterization and Modeling of High-Switching-Speed Behavior of SiC Active Devices

Their papers

• Single-Phase T-Type Inverter Performance Benchmark Using Si IGBTs, SiC MOSFETs, and GaN HEMTs (2016) — 220 citations
• A Comprehensive Study of Short-Circuit Ruggedness of Silicon Carbide Power MOSFETs (2016) — 236 citations