Datasheet Driven Silicon Carbide Power MOSFET Model

By M. Mudholkar, Shamim Ahmed, M. N. Ericson, S. Frank, C. Britton, H. Mantooth. IEEE transactions on power electronics, 2014

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Temperature-Dependent Characterization, Modeling, and Switching Speed-Limitation Analysis of Third-Generation 10-kV SiC MOSFET (2018, background): “These studies focus on MOSFET channel [24], base region [25], [26], parasitic capacitance [27], interaction with external circuits [28], [29], and parameter extraction [30], [31].”
Gate Oxide Reliability Issues of SiC MOSFETs Under Short-Circuit Operation (2015, methodology): “The drain–source voltage and current (V–I) curves of the SiC MOSFET have been sketched before and after the shortcircuit tests [27], [28].”
The Impact of Nonlinear Junction Capacitance on Switching Transient and Its Modeling for SiC MOSFET (2015, methodology): “For the SiC MOSFET PSpice model, Cgd has been already analyzed and modeled in detail with consideration of the nonlinear characteristics [11], and Cgs can be treated as constant because of the insignificant nonlinearity [16].”