Gate Oxide Reliability Issues of SiC MOSFETs Under Short-Circuit Operation
By Thanh Nguyen, Ashraf Ahmed, T. V. Thang, Joung-Hu Park. IEEE transactions on power electronics, 2015
225 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/2c2b710c8f0f8f3b4b2089a93ef3fc49876c78aa
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In Electrical and Electronic Engineering
- Huai Wang
- Frede Blaabjerg
- Alberto Castellazzi
- Emre Gurpinar
- Xiongfei Wang
- Marco Liserre
- Ke Ma
- Friedrich Wilhelm Fuchs
Citations in the corpus
- Power Electronics Reliability: State of the Art and Outlook (2021, background): “In [27], comparative testing of two types of 1.”
- Single-Phase T-Type Inverter Performance Benchmark Using Si IGBTs, SiC MOSFETs, and GaN HEMTs (2016, methodology): “In the literature, reliability, control 256 methods, and applications of 1200-V SiC MOSFETs and JFETs 257 have been discussed [27]–[34] but there is limited information 258 for WBG devices at 600-V blocking voltage range as 650-V 259 SiC MOSFET and 600-V GaN HEMT became available in the 260 last yea”