Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments
By Liangchun Yu, G. Dunne, K. Matocha, K. Cheung, J. Suehle, K. Sheng. IEEE transactions on device and materials reliability, 2010
220 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/9cd41130807b80cc8b0bc658a28dbfd816711881
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In Electrical and Electronic Engineering
Citations in the corpus
- Gate Oxide Reliability Issues of SiC MOSFETs Under Short-Circuit Operation (2015, background): “[10]–[12] have presented gate oxide reliability assessment of SiC MOSFET under high-temperature operation.”
- A 1200-V, 60-A SiC MOSFET Multichip Phase-Leg Module for High-Temperature, High-Frequency Applications (2014, unknown): “finally, the device degradation [30]–[32].”
- Failure and Reliability Analysis of a SiC Power Module Based on Stress Comparison to a Si Device (2017, background): “Step-controlled epitaxial growth and new trench structure can reduce the effect of material defects, thus the performance of the devices can be also improved [6], [7].”
- Overview of Silicon Carbide Technology: Device, Converter, System, and Application (2016, background): “impact on the long term stability of SiC MOSFETs, which had in the past suffered gate oxide reliability issues caused by poor interface quality [117].”
- Gate Oxide Degradation of SiC MOSFET in Switching Conditions (2014, background): “This is in contrast to the DC gate stress tests [3].”