A Comprehensive Study of Short-Circuit Ruggedness of Silicon Carbide Power MOSFETs

By G. Romano, A. Fayyaz, M. Riccio, L. Maresca, Giovanni Breglio, Alberto Castellazzi, A. Irace. IEEE Journal of Emerging and Selected Topics in Power Electronics, 2016

236 citations recorded by the source corpus.

The behavior of silicon carbide (SiC) power MOSFETs under stressful short-circuit (SC) conditions is investigated in this paper. Two different SC failure phenomena for SiC power MOSFETs are thoroughly reported. Experimental evidence and TCAD electrothermal simulations are exploited to describe and discriminate the failure sources. Physical causes are finally investigated and explained by means of properly calibrated numerical investigations and are reported along with their effects on devices' SC capability.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/dbca8d2a0c24dda1046021f148f5c29bda06eeb6

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In Electrical and Electronic Engineering

1. Alejandro G. Yepes
2. J. Doval‐Gandoy
3. Emil Levi

Citations in the corpus

• Wide Bandgap Devices in AC Electric Drives: Opportunities and Challenges (2019, background): “The short-circuit ruggedness of SiC MOSFETs is investigated, and two different failure phenomena are reported in [150].”