T. Khan
2006 IEEE International Symposium on Power Semiconductor Devices and IC's · with Chow · 2006
A researcher in the Science corpus: 1 paper; trusts 1 researcher and is trusted by 0 researchers here, as inferred from the citation graph.
Whom T. Khan trusts
Their strongest outbound trust, strongest first, inferred from their citations.
- T. Paul Chow (in Condensed Matter Physics)
Papers from T. Khan's perspective
Ordered by how strongly the researchers T. Khan trusts endorse each paper. Same corpus, a different order for every researcher.
- High-voltage normally off GaN MOSFETs on sapphire substrates (IEEE Transactions on Electron Devices)
- Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures
- High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior
- Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements (IEEE Transactions on Electron Devices)
- Ultra-thin oxide reliability for ULSI applications
- N2O Processing Improves the 4H-SiC:SiO2 Interface
- Review on materials, microsensors, systems and devices for high-temperature and harsh-environment applications (IEEE transactions on industrial electronics (1982. Print))
Their papers
- Enhancement-Mode n-Channel GaN MOSFETs on p and n-GaN/Sapphire Substrates (2006) — 146 citations