Andres Godoy
Electrical and Electronic Engineering · 2010
A researcher in the Science corpus: 1 paper; trusts 1 researcher and is trusted by 0 researchers here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 7 citations into it
Whom Andres Godoy trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Papers from Andres Godoy's perspective
Ordered by how strongly the researchers Andres Godoy trusts endorse each paper. Same corpus, a different order for every researcher.
- Continuous analytic I-V model for surrounding-gate MOSFETs (IEEE Electron Device Letters)
- Modeling of nanoscale gate-all-around MOSFETs (IEEE Electron Device Letters)
- Explicit continuous model for long-channel undoped surrounding gate MOSFETs (IEEE Transactions on Electron Devices)
- Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs (IEEE Electron Device Letters)
- Use of negative capacitance to provide voltage amplification for low power nanoscale devices. (Nano letters (Print))
- A Thin Film Approach to Engineering Functionality into Oxides
- A continuous, analytic drain-current model for DG MOSFETs
- Multiple-gate SOI MOSFETs
- Beyond the conventional transistor (IBM Journal of Research and Development)
- Multiple-gate SOI MOSFETs: device design guidelines