Temperature Measurement of Power Semiconductor Devices by Thermo-Sensitive Electrical Parameters—A Review
By Yvan Avenas, Laurent Dupont, Zoubir Khatir. IEEE transactions on power electronics, 2012
525 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/2b469894aa62735049f58007f8b4f1e5af982d00
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In Electrical and Electronic Engineering
- Frede Blaabjerg
- Huai Wang
- U. Choi
- Marco Liserre
- Søren Jørgensen
- Wuhua Li
- Xiangning He
- S. Munk‐Nielsen
In Materials Chemistry
Citations in the corpus
- Power Electronics Reliability: State of the Art and Outlook (2021, background): “Temperature-Sensitive-Electrical-Parameters (TSEP) are widely studied for temperature estimation, limited to 100 μs temporal resolution [114].”
- Transitioning to Physics-of-Failure as a Reliability Driver in Power Electronics (2014, background): “Since the main failure cause for power module is the junction temperature swing, measuring it or estimating by means of Thermo-Sensitive Electrical Parameters (TSEPs) is one of the most interesting challenges [72].”
- IGBT Junction Temperature Measurement via Peak Gate Current (2016, methodology): “Nevertheless, electrical temperature measurements in power electronic converters using TSEPs are not well developed [7], [8].”
- Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective (2023, background): “For packaged devices, T j is often monitored by measuring a thermosensitive electrical parameter (TSEP) [90].”
- Degradation Assessment and Precursor Identification for SiC MOSFETs Under High Temp Cycling (2019, methodology): “ods like thermocouple-based sensor, contactless IR setup, and temperature-dependent electric parameter (TSEP) estimation have been proposed to obtain junction temperature [16].”
- Power Cycling Test Methods for Reliability Assessment of Power Device Modules in Respect to Temperature Stress (2018, background): “VCE ON of an IGBT as a function of temperature under different injected currents [79].”
- In Situ Diagnostics and Prognostics of Solder Fatigue in IGBT Modules for Electric Vehicle Drives (2015, background): “Direct measurement of the semiconductor device junction temperature is impractical [45].”
- Junction Temperature Extraction Approach With Turn-Off Delay Time for High-Voltage High-Power IGBT Modules (2016, background): “measurement approaches can be categorized into the opticalbased, physical contact-based, and thermo-sensitive electrical parameter (TSEP)-based solutions [11]–[13].”