IGBT Junction Temperature Measurement via Peak Gate Current

By Nick Baker, S. Munk‐Nielsen, Francesco Iannuzzo, Marco Liserre. IEEE transactions on power electronics, 2016

147 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/cf9ebd7f46936410e297fe5d1b13a84d4b8b255c

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. U. Choi
2. Frede Blaabjerg
3. Søren Jørgensen
4. Xiongfei Wang
5. Huai Wang
6. Marco Liserre
7. Friedrich Wilhelm Fuchs
8. Yun Wei Li

Citations in the corpus

• Power Cycling Test Methods for Reliability Assessment of Power Device Modules in Respect to Temperature Stress (2018, methodology): “RG int of one IGBT inside an Infineon FS200R12PT4 module under different temperatures [81].”