Doping-Less Tunnel Field Effect Transistor: Design and Investigation

By M. Jagadesh Kumar, S. Janardhanan. IEEE Transactions on Electron Devices, 2013

596 citations recorded by the source corpus.

Using calibrated simulations, we report a detailed study of the doping-less tunnel field effect transistor (TFET) on a thin intrinsic silicon film using charge plasma concept. Without the need for any doping, the source and drain regions are formed using the charge plasma concept by choosing appropriate work functions for the source and drain metal electrodes. Our results show that the performance of the doping-less TFET is similar to that of a corresponding doped TFET. The doping-less TFET is expected to be free from problems associated with random dopant fluctuations. Furthermore, fabrication of doping-less TFET does not require a high-temperature doping/annealing processes and therefore cuts down the thermal budget, opening up possibilities for fabricating TFETs on single crystal silicon-on-glass substrates formed by wafer scale epitaxial transfer.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/95eedb87bd1c723b4000456a60f219ac6533c5f0

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Biomedical Engineering

1. Dharmendra Singh Yadav
2. Mamidala Jagadesh Kumar
3. Dheeraj Sharma
4. D. Abdi

In Electrical and Electronic Engineering

1. Mamidala Jagadesh Kumar
2. D. Abdi
3. Dharmendra Singh Yadav
4. Dheeraj Sharma
5. Shubham Sahay

Citations in the corpus

• Charge-Plasma Based Process Variation Immune Junctionless Transistor (2014, background): “It reduces the overall metal-semiconductor contact resistance and also avoid the possibility of silicide formation, this ensures that subthreshold swing is not adversely affected [14].”
• In-Built N+ Pocket p-n-p-n Tunnel Field-Effect Transistor (2014, methodology): “Therefore, in this letter by using the charge plasma concept [14]–[18], we demonstrate for the first time that an in-built N+ pocket can be realized without the need for a separate implantation.”
• A Charge-Plasma-Based Dielectric-Modulated Junctionless TFET for Biosensor Label-Free Detection (2017, background): “17 eV) and Eg denotes the bandgap of Si material [17], [19], whereas to induce p+ source region, the work-function of metallic contact should be more than intrinsic Si (φmS > χSi + Eg/2).”