High-mobility β-Ga2O3() single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes with Ni contact

By T. Oishi, Y. Koga, K. Harada, M. Kasu. 2015

241 citations recorded by the source corpus.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/d4a2bced0160695020108172779c8bb3a764dd97

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In Electronic, Optical and Magnetic Materials

1. Z. Galazka
2. Akito Kuramata
3. Gregg H. Jessen
4. M. Baldini
5. Kohei Sasaki
6. Günter Wagner
7. Masataka Higashiwaki
8. H. von Wenckstern

In Materials Chemistry

1. Z. Galazka
2. Gregg H. Jessen
3. Akito Kuramata
4. M. Baldini
5. Kohei Sasaki
6. Günter Wagner
7. Debdeep Jena
8. Huili Grace Xing

Citations in the corpus

• Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV (2018, background): “2 MV/cm [4], [5] already exceeds that of SiC and GaN [6], and electron mobility of 100-150 cm2/Vs has been achieved in both bulk substrates [7] as well as epitaxial layers [8].”