Monolayer $\hbox{MoS}_{2}$ Transistors Beyond the Technology Road Map

By K. Alam, Roger K. Lake. IEEE Transactions on Electron Devices, 2012

143 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/42ec1fba6ab6ac037d355e1f5aaf9a1bde32d37a

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Jing Guo
2. Yang Lu
3. Dmitri E. Nikonov
4. Ian A. Young

In Materials Chemistry

1. Leitao Liu
2. Jing Guo
3. Yang Lu
4. Phaedon Avouris
5. Frank Schwierz
6. Dmitri E. Nikonov
7. Ian A. Young

Citations in the corpus

• On Monolayer ${\rm MoS}_{2}$ Field-Effect Transistors at the Scaling Limit (2013, background): “[12] introduced a backscattering coefficient to the ballistic transport model to mimic the scattering effects in MoS2 transistors and predicted better performance of MoS2 transistors over ultrathin-body Si transistors.”