A Review of Germanium-Antimony-Telluride Phase Change Materials for Non-Volatile Memories and Optical Modulators

By Pengfei Guo, Andrew M. Sarangan, I. Agha. Applied Sciences, 2019

225 citations recorded by the source corpus.

Chalcogenide phase change materials based on germanium-antimony-tellurides (GST-PCMs) have shown outstanding properties in non-volatile memory (NVM) technologies due to their high write and read speeds, reversible phase transition, high degree of scalability, low power consumption, good data retention, and multi-level storage capability. However, GST-based PCMs have shown recent promise in other domains, such as in spatial light modulation, beam steering, and neuromorphic computing. This paper reviews the progress in GST-based PCMs and methods for improving the performance within the context of new applications that have come to light in recent years.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/7e8a087c5a0295dc0fa9e788bb308d1841368ce6