Graphene Transistors: Status, Prospects, and Problems

By Frank Schwierz. Proceedings of the IEEE, 2013

461 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/d611eb1d0e51df71d18ecf5875c7833d51c211e0

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Filippo Giubileo
2. A. Di Bartolomeo
3. Sanjay Kumar Banerjee
4. Ali Javey

In Electrical and Electronic Engineering

1. Filippo Giubileo
2. Sanjay Kumar Banerjee
3. Ali Javey
4. S. Desai
5. A. Di Bartolomeo
6. Chenming Calvin Hu

In Materials Chemistry

1. Filippo Giubileo
2. Giuseppe Luongo
3. Sanjay Kumar Banerjee
4. Hema C. P. Movva
5. Ali Javey
6. Amritesh Rai
7. D. Taneja
8. A. Di Bartolomeo

Citations in the corpus

• Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor (2018, background): “Hence, a graphene transistor cannot be turned “OFF” [24,25].”
• Field-effect transistors built from all two-dimensional material components. (2014, background): “ties of small quantum capacitance and extremely high mobilities in scaled transistors.(1) 3 Transition metal dichalcogenides”
• Hybrid graphene/silicon Schottky photodiode with intrinsic gating effect (2017, background): “ction formed by graphene with 2D or 3D semiconductors (Gr/S junction) has recently entered an hectic phase [1, 2, 3, 4, 5, 6], matching or overcoming the activity on graphene field-effect transistors [7, 8, 9, 10, 11]. The interest in the Gr/S junction originates from unique transport properties tha”