New unipolar switching power device figures of merit

By A. Huang. IEEE Electron Device Letters, 2004

245 citations recorded by the source corpus.

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Power Semiconductor Devices for Smart Grid and Renewable Energy Systems (2017, methodology): “Several material figure of merits (FOMs) have been derived by Huang [63] and are updated in Table 1 with recent material data [40], [89]–[90] for a number of important WBG materials with the higher FOMs being better.”
Surface transfer doping of diamond: A review (2021, background): “Comparison of figures-of-merit for diamond compared with other semiconductors based on Baliga’s and Huang’s analysis [7,18,20].”
Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective (2023, background): “For a unipolar transistor, the total power loss (Ploss) is the sum of conduction loss (Pcon) and switching loss (Psw), which can be described by [29]”
Opportunities and Challenges in Very High Frequency Power Conversion (2009, unknown): “and overlap loss during switching [57].”
CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion (2012, background): “From the figure-of-merit consideration [1], [2], the material system looks attractive for high-power”
Recent advances in diamond power semiconductor devices (2018, background): “temperature operation capability, and the reduction in chip area [4].”