Epitaxial Graphene Transistors on SiC Substrates

By J. Kedzierski, P. Hsu, P. Healey, P. Wyatt, C. Keast, M. Sprinkle, C. Berger, W. D. Heer. IEEE Transactions on Electron Devices, 2008

402 citations recorded by the source corpus.

This paper describes the behavior of top-gated transistors fabricated using carbon, specifically epitaxial graphene on SiC, as the active material. Although graphene devices have been built before, in this paper, we provide the first demonstration and systematic evaluation of arrays of a large number of transistors produced using standard microelectronics methods. The graphene devices presented feature high-k dielectric, mobilities up to 5000 cm2/Vldr s, and Ion/Ioff ratios of up to seven, and are methodically analyzed to provide insight into the substrate properties. Typical of graphene, these micrometer-scale devices have negligible band gaps and, therefore, large leakage currents.

Subfields: Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/07ea2f4a354a94c6ff9278d07e0eab34f12857a4

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In Materials Chemistry

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Citations in the corpus

• Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide. (2009, background): “On the other hand, no significant difference in electron mobility was observed between the two geometries, indicating that the step edges have a minor role, similar to graphene field-effect transistors in multilayer graphen”
• A comprehensive review of graphene nanocomposites: research status and trends (2013, methodology): “[57] J.”
• Graphene based materials: Past, present and future (2011, methodology): “Whereas, other study showed the mobility variation for multilayer epitaxial graphene films from 600 to 1200 cm(2)/Vs for Si-face measured in ambient condition and could reached up to 5000 cm(2)/Vs for the carbon terminated face with on/off ratio up to seven, the difference was attributed to the diff”
• Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates (2009, background): “ated graphene layers on top of a SiO2 surface [5], [6], while there are several reports on graphene FETs using epitaxialgraphene materials grown by graphitization of SiC substrates [7]–[ 10 ].”