Why is nonvolatile ferroelectric memory field-effect transistor still elusive?

By Tengyu Ma, Jin-Ping Han. IEEE Electron Device Letters, 2002

413 citations recorded by the source corpus.

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

Metal-ferroelectric-insulator-semiconductor memory FET with long retention and high endurance (2004, background): “The effect of the depolarization field[11] on long retention characteristics will be discussed in the near future on the basis of additional experimental results.”
The Past, the Present, and the Future of Ferroelectric Memories (2020, background): “From the analysis in [9], we can learn that two aspects will help.”
Ferroelectric polymer Langmuir-Blodgett films for nonvolatile memory applications (2005, background): “, Boston, MA, 2002, pp. 3–13.”
Overview of candidate device technologies for storage-class memory (2008, background): “Also, if a dielectric capacitor is used to separate the ferroelectric from the silicon to ease integration, then the nonvolatile data lifetime decreases to mere weeks because of the inherent depolarizing field present in such a structure [32, 38].”
A review of emerging non-volatile memory (NVM) technologies and applications (2016, background): “FeFET is not a new concept, but its development has been hindered by depolarization field, gate leakage, and the lack of scalable ferroelectric gate dielectrics [36].”
Why Is FE–HfO2 More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective (2016, methodology): “The underlying mechanisms responsible for the loss of retention time in the FeFET-based memory cell were discussed in [1], [3], [6], and [7].”