Metal-ferroelectric-insulator-semiconductor memory FET with long retention and high endurance

By S. Sakai, R. Ilangovan. IEEE Electron Device Letters, 2004

186 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/d9777b5c733cf6a7bd582ddb962b55cc39547e8b

How researchers see this paper

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In Electrical and Electronic Engineering

1. Uwe Schroeder
2. Thomas Mikolajick
3. Stefan Slesazeck
4. Min Hyuk Park
5. Tony Schenk

In Materials Chemistry

1. Uwe Schroeder
2. Stefan Slesazeck
3. Thomas Mikolajick
4. Min Hyuk Park

Citations in the corpus

• Ferroelectric polymer Langmuir-Blodgett films for nonvolatile memory applications (2005, background): “devices generally have short data-retention times due to leakage, depolarization, or both [18], [19], though some specific examples have shown retention times of days [20], [21].”
• The Past, the Present, and the Future of Ferroelectric Memories (2020, methodology): “[67] S. Sakai and R. Ilangovan, “Metal-ferroelectric-insulatorsemiconductor memory FET with long retention and high endurance,” IEEE Electron Device Lett., vol. 25, pp. 369–371, 2004, doi: 10.1109/ LED.2004.828992.”