Statistical characterization of trap position, energy, amplitude and time constants by RTN measurement of multiple individual traps

By T. Nagumo, K. Takeuchi, T. Hase, Y. Hayashi. International Electron Devices Meeting, 2010

137 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/455c551b6b55aff5633d0b2c191e1797b0c780ec

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. D. Fleetwood
2. Ben Kaczer
3. Tibor Grasser

In Electrical and Electronic Engineering

1. Tibor Grasser
2. Hans Reisinger
3. Thomas Aichinger
4. Ben Kaczer
5. D. Fleetwood
6. Michael Nelhiebel
7. Philipp Hehenberger
8. Wolfgang Goes

Citations in the corpus

• The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps (2011, background): “[62], who demonstrated that the depth of the defect is uncorrelated with the characteristic time”
• $1/f$ Noise and Defects in Microelectronic Materials and Devices (2015, background): “Fast trapping and recovery events that occur during NBTI measurements on s-to-ms time scales also can result from interactions of charge carriers with either interface traps or fast border traps [88], [89], [127]–[132], [134], [135], [148].”