Magnetoresistive random access memory using magnetic tunnel junctions
By S. Tehrani, J. Slaughter, M. Deherrera, Bradley N. Engel, N. Rizzo, J. Salter, M. Durlam, R. W. Dave, J. Janesky, B. Butcher and 2 more. Proceedings of the IEEE, 2003
375 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/111cd8f7ea88759f71a609017b817bae6627974a
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In Atomic and Molecular Physics, and Optics
- Alexander Driskill-Smith
- Vladimir Nikitin
- Eugene Chen
- Adrian Ong
- Steven Watts
- Alexey Khvalkovskiy
- W. H. Butler
- Mohamad Krounbi
In Electrical and Electronic Engineering
- M. Shaneyfelt
- J. Schwank
- Paul E. Dodd
- J. Felix
- C. Marrows
- D. Fleetwood
- Lloyd W. Massengill
- Pascale Gouker
Citations in the corpus
- Current and Future Challenges in Radiation Effects on CMOS Electronics (2010, background): “Other devices that have received a great deal of recent interest include phase change and magnetic non-volatile memories (PCM and MRAM, respectively) [125], [126].”
- Low-cost and nanoscale non-volatile memory concept for future silicon chips (2005, background): “A number of emerging memory technologies, namely magnetic RAM (MRAM”
- Basic principles of STT-MRAM cell operation in memory arrays (2013, background): “STT-MRAM leverages MTJ materials development from the hard disk drive (HDD) industry, and memory design and manufacturing knowhow from the fieldswitched (conventional) MRAM [1], precursor technology to STT-MRAM.”
- A 4-Mb toggle MRAM based on a novel bit and switching method (2005, methodology): “A parallel alignment of the free layer with respect to the pinned layer results in a low resistance state, while an antiparallel alignment results in a high resistance state [2].”
- Spin-polarised currents and magnetic domain walls (2005, background): “A current is then passed through the perpendicular conductor, the so-called bit line, that intersects the word line at the MRAM element that is to be switched.”