A 4-Mb toggle MRAM based on a novel bit and switching method

By Bradley N. Engel, Johan Åkerman, B. Butcher, R. W. Dave, M. Deherrera, M. Durlam, G. Grynkewich, J. Janesky, S. Pietambaram, N. Rizzo and 4 more. IEEE transactions on magnetics, 2005

438 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/10ed8013879e462e3b770b9fe82b953713603023

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Citations in the corpus

Spin-Torque and Spin-Hall Nano-Oscillators (2015, background): “From a technological standpoint, the two most important consequences of STT are: 1) the possibility of programming a magnetic memory, such as MRAM [23], [24], using a small direct current through the bit, rather than larger currents through adjacent programming lines; and 2) the possibility of creat”
Spin-polarised currents and magnetic domain walls (2005, background): “A current is then passed through the perpendicular conductor, the so-called bit line, that intersects the word line at the MRAM element that is to be switched.”
The emergence of spin electronics in data storage. (2007, methodology): “Several demonstrator circuits were rapidly presented by most leading semiconductor companies, culminating with the first MRAM product, a 4 Mbit standalone memory [33] commercialized by Freescale in 2006, and soon voted “Product of the Year” by "Electronics Products Magazine" (Jan.”
High Speed, High Stability and Low Power Sensing Amplifier for MTJ/CMOS Hybrid Logic Circuits (2009, methodology): “REFERENCES [1] B. N. Engel, J. Akerman, B. Butcher, R. W. Dave, M. DeHerrera, M. Durlam, G. Grynkewich, J. Janesky, S. V. Pietambaram, N. D. Rizzo, J. M. Slaughter, K. Smith, J. J. Sun, and S. Tehrani, “A 4-Mb toggle MRAM based on a novel bit and switching method,” IEEE Trans.”
Spintronics (2015, methodology): “Later in 2003, the selectivity problem was solved by introducing a new write method, named toggle switching [Savtchenko et al. 2003; Engel et al. 2005], which is based on the use of a synthetic ferrimagnetic (SF) free layer.”
The Promise of Nanomagnetics and Spintronics for Future Logic and Universal Memory (2010, neutral): “A MRAM chip product prototype was announced in 2003 and the first ever MRAM commercial products started to ship in 2006 [ 35 ].”
Compact Modeling of Perpendicular-Anisotropy CoFeB/MgO Magnetic Tunnel Junctions (2012, methodology): “One promising method relies on using spin transfer torques (STTs) in MTJs based on CoFeB/MgO, which involve low threshold currents IC0 and well-understood mechanisms for switching [11], [12].”
Spin-transfer effects in nanoscale magnetic tunnel junctions (2004, methodology): “The idea of using MTJ bits as the basis for a simultaneously non-volatile, highspeed, dense, and low-power memory has been under development for over a decade [22, 80, 81].”