Basic principles of STT-MRAM cell operation in memory arrays

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Spin-torque building blocks. (2014, background): “The second generation of magnetic random access memories (MRAMs) based on spin-torque writing, called ST-MRAM, is under industrial development and has the potential to replace current cache memory technologies in the next few years thanks to its speed, density, low power consumption and almost unlim”
Memory devices and applications for in-memory computing (2020, background): “NaTuRe NaNoTecHNology This non-volatile accumulative behaviour, in spite of its nonlinear and stochastic nature, can be exploited in several applications, such as training deep neural networks, where the conductance values need to be incrementally modified.”
Overview of emerging nonvolatile memory technologies (2014, background): “STT-MRAM is a magnetic memory technology that exerts the base platform established by an existing memory called MRAM to enable a scalable nonvolatile memory solution for advanced process nodes [92,93].”