F. Hooge
IEEE Transactions on Electron Devices · 2008
A researcher in the Science corpus: 1 paper; trusts 0 researchers and is trusted by 0 researchers here, as inferred from the citation graph.
Papers from F. Hooge's perspective
Ordered by how strongly the researchers F. Hooge trusts endorse each paper. Same corpus, a different order for every researcher.
- Noise modeling for RF CMOS circuit simulation
- End of Moore's law: thermal (noise) death of integration in micro and nano electronics
- Electrical noise and RTS fluctuations in advanced CMOS devices (Microelectronics and reliability)
- Critical discussion on unified 1/f noise models for MOSFETs
- A General Theory of Phase Noise in Electrical Oscillators
- RF-CMOS Performance Trends (European Solid-State Device Research Conference)
- A compact scattering model for the nanoscale double-gate MOSFET
- Analytical modeling of quantization and volume inversion in thin Si-film DG MOSFETs
- NROM: A novel localized trapping, 2-bit nonvolatile memory cell (IEEE Electron Device Letters)
- A review of the pseudo-MOS transistor in SOI wafers: operation, parameter extraction, and applications
Their papers
- What Do We Certainly Know About $\hbox{1}/f$ Noise in MOSTs? (2008) — 182 citations