Noise modeling for RF CMOS circuit simulation
By A. Scholten, L. Tiemeijer, R. V. Langevelde, Ramon J. Havens, A. Z. Duijnhoven, V. Venezia. 2003
384 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/5038365531534c6bd5f08543280c3c390b6925de
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Electrical and Electronic Engineering
- M. J. Deen
- Chih-Fan Liao
- Shen-Iuan Liu
- Chih-Hung Chen
- Yuhua Cheng
- Ali M. Niknejad
- Bram Nauta
- Lode K. J. Vandamme
Citations in the corpus
- PSP: An Advanced Surface-Potential-Based MOSFET Model for Circuit Simulation (2006, background): “Only in the last few years has this subject been brought in a definitive form, both from the point of view of model accuracy [22], [23] and implementation techniques [24].”
- An ultrawideband CMOS low-noise amplifier for 3.1-10.6-GHz wireless receivers (2004, background): “The induced gate noise and drain current noise power spectral densities are, respectively [13] (8) (9) where 1.33–4, and 0.67–1.33 are excess noise parameters [15], and is the channel conductance at .”
- MOSFET modeling for RF IC design (2005, methodology): “noise and induced gate noise are obtained from either theoretical calculation based on any noise model mentioned in previous sections or experimental results [44], [46], [61], this section provides a simple method to implement the enhanced channel noise and the induced gate noise for RF IC applicati”
- A Broadband Noise-Canceling CMOS LNA for 3.1–10.6-GHz UWB Receivers (2007, background): “For a deep-submicron MOSFET, the value of exceeds 1 in saturation and may become 2–3 under some biasing conditions [13]–[15].”
- Analog circuits in ultra-deep-submicron CMOS (2005, background): “Note that at RF frequencies effects like the induced gate noise also contribute to the total gate noise [17], [18].”
- What Do We Certainly Know About $\hbox{1}/f$ Noise in MOSTs? (2008, background): “1) Submicrometer devices show bumpy 1/f -like spectra with a wide spreading [61], [62].”