Critical discussion on unified 1/f noise models for MOSFETs

By E. Vandamme, L. Vandamme. 2000

184 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/43297f5530d57a3feeee150534934f09c2c429ad

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

1. R. V. Langevelde
2. A. Scholten
3. L. Tiemeijer
4. Ramon J. Havens
5. Mikael Östling
6. V. Venezia
7. M. Von Haartman
8. A. Z. Duijnhoven

Citations in the corpus

• Low-Frequency Noise in Advanced MOS Devices (2007, background): “(3-39) overestimates the number fluctuation noise at high drain currents due to the fact that gm is decreasing with gate voltage beyond gm,max.”
• What Do We Certainly Know About $\hbox{1}/f$ Noise in MOSTs? (2008, unknown): “The “reconciliation” between the ΔN and Δμ models by adding a correlated Δμ(ΔN) source to the main source ΔN is not more than curve fitting [35], [36].”
• Noise modeling for RF CMOS circuit simulation (2003, background): “Thus, either the arguments of [12] against the unified noise model must be proven wrong or an alternative extension of the number fluctuation theory should be devised.”